JY11M N Channel Enhancement Mode Power MOSFET
GENERAL DESCRIPTION
The JY11M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
100V/110A, RDS(ON) =6.5mΩ@VGS=10V
Fast switching and reverse body recovery
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
APPLICATIONS
Switching application
Hard switched and high frequency circuits
Power Management for Inverter Systems
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
Symbol |
Parameter |
Limit |
Unit |
VDS |
Drain-Source Voltage |
100 |
V |
VGS |
Gate-Source Voltage |
± 20 |
V |
ID |
Continuous Drain
Current |
Tc=25ºC |
110 |
A |
Tc=100ºC |
82 |
IDM |
Pulsed Drain Current |
395 |
A |
PD |
Maximum Power Dissipation |
210 |
W |
TJ TSTG |
Operating Junction and Storage Temperature
Range |
-55 to +175 |
ºC |
RθJC |
Thermal Resistance-Junction to Case |
0.65 |
ºC/W |
RθJA |
Thermal Resistance-Junction to Ambient |
62 |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
Symbol |
Parameter |
Conditions |
Min |
Typ |
Max |
Unit |
Static Characteristics |
BVDSS |
Drain-Source
Breakdown Voltage |
VGS=0V,IDS=250uA |
100 |
V |
IDSS |
Zero Gate Voltage
Drain Current |
VDS=100V,VGS=0V |
1 |
uA |
IGSS |
Gate-Body Leakage
Current |
VGS=± 20V,VDS=0V |
± 100 |
nA |
VGS(th) |
Gate Threshold
Voltage |
VDS= VGS, IDS=250uA |
2.0 |
3.0 |
4.0 |
V |
RDS(ON) |
Drain-Source
On-state Resistance |
VGS=10V,IDS=40A |
6.5 |
mΩ |
gFS |
Forward
Transconductance |
VDS=50V, IDS=40A |
100 |
S |
DOWNLOAD JY11M USER MANUAL
JY11M.pdf